Transistor Data and Replacement

Maximum collector-to-base voltage (VCBO) – The replacement part should have a VCBO rating equal to or higher than the original.

Maximum collector-to-emitter voltage (VCEO) – The replacement part should have a VCEO rating equal to or higher than the original.

Maximum emitter-to-base voltage (VEBO) – The replacement part should have a VEBO rating equal to or greater than the original.

Maximum collector current (IC) – The replacement part should be able to handle as much (or more) collector current as the original.

Power dissipation (PD Watts) – The replacement part should be able to dissipate as much (or more) power as the original part.

Gain (hFE) – The replacement should have a gain equal to or better than the original and it should be as close to the original specification as possible.

Gain-bandwidth (fT) – the replacement should have a transition frequency equal to or faster than the original and it should be as close to the original specification as possible.

Below is a table of application requirement and important specification that you can use for guidelines when comes to transistor substitution.

Application Requirement and Important Specifications

  1. General purpose low level amplifier and switching transistors. Spec- hFE, IC (max), fT, VCEO
  2. Power switching applications. Spec- VCEO, VCBO, hFE, IC (max), PD (max)
  3. Low level IF/RF amplification. Spec- IC (max), fT, VCEO
  4. Audio amplification. Spec- IC (max), PD (max), hFE, VCEO
  5. High voltage transistors. Spec- VCEO, VCBO, IC (max), fT